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US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,262, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Dong-Sik... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including vertical active pillar" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,263, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including vertical act... और पढ़ें


US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Semiconductor structure including buried bit line structures having different widths" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,264, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure including buried bit line ... और पढ़ें


US Patent Issued to Yangtze Memory Technologies on Nov. 3 for "Managing vertical structures in three-dimensional semiconductive devices" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,265, issued on Nov. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Managing vertical structures in three-dimension... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,266, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor memory device" was invented b... और पढ़ें


US Patent Issued to Micron Technology on Nov. 3 for "Semiconductor device and method of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,267, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Semiconductor device and method of forming the same" was inve... और पढ़ें


US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Memory device including recessed gate structure having high-k gate dielectric layer and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,268, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory device including recessed gate structure ha... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including peripheral insulating structure" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,269, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including peripheral insu... और पढ़ें


US Patent Issued to STMicroelectronics (Rousset) on Nov. 3 for "One-time programmable memory cell" (French Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,270, issued on Nov. 3, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France). "One-time programmable memory cell" was invented ... और पढ़ें


US Patent Issued to SK hynix on Nov. 3 for "Semiconductor device and method of manufacturing the semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,271, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device and method of manufacturing the semicon... और पढ़ें