US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including peripheral insulating structure" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,269, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including peripheral insulating structure" was invented by Dongkyun Lim (Suwon-si, South Korea), Kyumin Kim (Suwon-si, South Korea), Hyejin Kim (Suwon-si, South Korea) and Seungyoon Song (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes bitlines on a cell region of a substrate; a contact plug between the bitlines; a landing pad on the contact plug; a peripheral gate on a peripheral circuit region of the substrate; a lower interlayer insulating layer covering a side surface of the periph...