ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,263, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including vertical active pillar" was invented by Hongjun Lee (Suwon-si, South Korea), Keunnam Kim (Suwon-si, South Korea) and Kiseok Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate, a bit line structure, first and second gate electrodes spaced apart from each other, and first and second gate dielectric layers. The substrate may include a first upper active region and a second upper active region spaced apart from each other and protruding upwardly from a lower a...