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US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,242, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and manufact... और पढ़ें


US Patent Issued to GlobalFoundries U.S. on Nov. 3 for "Semiconductor fin with divots, transistor including the semiconductor fin, memory cell including the transistor, and associated methods" (New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,243, issued on Nov. 3, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Semiconductor fin with divots, transistor including the sem... और पढ़ें


US Patent Issued to Socionext on Nov. 3 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,244, issued on Nov. 3, was assigned to Socionext Inc. (Kanagawa, Japan). "Semiconductor device" was invented by Wenzhen Wang (Yokohama, Japa... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Interleaved word lines for memory devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,245, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interleaved word lines for memory dev... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,246, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device" was invented by K... और पढ़ें


US Patent Issued to Fujian Jinhua Integrated Circuit on Nov. 3 for "Semiconductor device and method of fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,247, issued on Nov. 3, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor device and method of... और पढ़ें


US Patent Issued to Fujian Jinhua Integrated Circuit on Nov. 3 for "Memory device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,248, issued on Nov. 3, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Memory device and manufacturing me... और पढ़ें


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 3 for "Method for forming capacitor and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,249, issued on Nov. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Method for forming capacitor and semiconducto... और पढ़ें


US Patent Issued to Seoul National University R&DB foundation on Nov. 3 for "Memory device and manufacturing method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,250, issued on Nov. 3, was assigned to Seoul National University R&DB foundation (Seoul, South Korea). "Memory device and manufacturing meth... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,251, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Min Hee ... और पढ़ें