US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Interleaved word lines for memory devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,245, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interleaved word lines for memory devices" was invented by Yumito Aoyagi (Tainan City, Taiwan) and Makoto Yabuuchi (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory system includes a first column of memory cells coupled to a first word line and a second a second column of memory cells coupled to a second word line. A first memory cell of the first column is in the same row as a second memory cell of the second column. The memory system includes a word line driver circuit configured to generate a select signal at the fir...