ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,247, issued on Nov. 3, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).
"Semiconductor device and method of fabricating the same" was invented by Yu-Cheng Tung (Quanzhou City, China) and Janbo Zhang (Quanzhou City, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides semiconductor device and a fabricating method thereof, including a plurality of first extension pads, an extension margin, a plurality of second extension pads, and at least one third extension pad. The first extension pads are separated from each other and each includes a first length. The extension margin is disposed at o...