US Patent Issued to Micron Technology on Aug. 11 for "Erase operation with electron injection for reduction of cell-to-cell interference in a memory sub-system" (California, Idaho Inventors)

Posted On: 2026-08-12

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,141, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Erase operation with electron injection for reduction of ce... Read More

US Patent Issued to Micron Technology on Aug. 11 for "Techniques for multi-level chalcogenide memory cell programming" (Italian Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,142, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Techniques for multi-level chalcogenide memory cell program... Read More

US Patent Issued to Synopsys on Aug. 11 for "Memristor-enabled programmable sensing and switching threshold adjustment" (Texas Inventor)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,143, issued on Aug. 11, was assigned to Synopsys Inc. (Sunnyvale, Calif.). "Memristor-enabled programmable sensing and switching threshold ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device and electronic system" (South Korean Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,144, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device and electronic system" ... Read More

US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,145, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three-dimensional memory devices and fabricat... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Nonvolatile memory device with reduced lateral charge" (South Korean Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,146, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Nonvolatile memory device with reduced la... Read More

US Patent Issued to SK hynix on Aug. 11 for "Memory device related to performing a read operation and method of operating the memory device" (South Korean Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,147, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device related to performing a read operation and m... Read More

US Patent Issued to SK hynix on Aug. 11 for "Semiconductor memory device for performing blind program operation and method of operating the same" (South Korean Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,148, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device for performing blind program o... Read More

US Patent Issued to Sandisk Technologies on Aug. 11 for "State dependent suspend-resume-go for performance improvement in a memory device" (California Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,149, issued on Aug. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "State dependent suspend-resume-go for performance im... Read More

US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Programming methods for memory devices, memory devices and memory systems to decrease programming time of a programming operation" (Chinese Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,150, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Programming methods for memory devices, memor... Read More

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US Patent Issued to Micron Technology on Aug. 11 for "Erase operation with electron injection for reduction of cell-to-cell interference in a memory sub-system" (California, Idaho Inventors)

US Patent Issued to Micron Technology on Aug. 11 for "Techniques for multi-level chalcogenide memory cell programming" (Italian Inventors)

US Patent Issued to Synopsys on Aug. 11 for "Memristor-enabled programmable sensing and switching threshold adjustment" (Texas Inventor)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device and electronic system" (South Korean Inventors)

US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Nonvolatile memory device with reduced lateral charge" (South Korean Inventors)

US Patent Issued to SK hynix on Aug. 11 for "Memory device related to performing a read operation and method of operating the memory device" (South Korean Inventors)

US Patent Issued to SK hynix on Aug. 11 for "Semiconductor memory device for performing blind program operation and method of operating the same" (South Korean Inventors)

US Patent Issued to Sandisk Technologies on Aug. 11 for "State dependent suspend-resume-go for performance improvement in a memory device" (California Inventors)

US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Programming methods for memory devices, memory devices and memory systems to decrease programming time of a programming operation" (Chinese Inventors)