US Patent Issued to Micron Technology on Aug. 11 for "Erase operation with electron injection for reduction of cell-to-cell interference in a memory sub-system" (California, Idaho Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,141, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Erase operation with electron injection for reduction of cell-to-cell interference in a memory sub-system" was invented by Hong-Yan Chen (San Jose, Calif.), Priya Vemparala Guruswamy (Boise, Idaho), Pamela Castalino (Boise, Idaho) and Tomoko Ogura Iwasaki (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device causes a programming pulse to be applied to a set of wordlines, where the programming pulse causes a set of electrons to be injected into a first set of gate regions and a second set of gate regions. The control logic execu...