US Patent Issued to Synopsys on Aug. 11 for "Memristor-enabled programmable sensing and switching threshold adjustment" (Texas Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,143, issued on Aug. 11, was assigned to Synopsys Inc. (Sunnyvale, Calif.).

"Memristor-enabled programmable sensing and switching threshold adjustment" was invented by Rouwaida Nawaf Kanj (Cedar Park, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit includes a PMOS transistor having a source terminal coupled to a first node and a drain terminal coupled to a second node; a first programmable memristor having a first terminal coupled to the first node and a second terminal receiving a first voltage; and a first select transistor having a terminal coupled to the first node, a second terminal coupled to a third node adapted to receive a sec...