US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Read-only memory device and method" (Taiwanese Inventor)

पोस्टेड ऑन: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,158, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Read-only memory device and met... और पढ़ें

US Patent Issued to Silicon Storage Technology on Sept. 1 for "Non-volatile memory cell with ONO compound insulation layer between floating and control gates and a method of fabrication" (California Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,159, issued on Sept. 1, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.). "Non-volatile memory cell with ONO compound ins... और पढ़ें

US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Sept. 1 for "NOR-type memory device having decreased channel resistance, method of manufacturing NOR-type memory device, and electronic apparatus including memory device" (New York Inventor)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,160, issued on Sept. 1, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "NOR-type memory device havin... और पढ़ें

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "3D NAND memory device with cross-stacking structure" (Chinese Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,161, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "3D NAND memory device with cross-stacking str... और पढ़ें

US Patent Issued to Sandisk Technologies on Sept. 1 for "Three-dimensional memory device including replacement insulating layers and methods of forming the same" (Japanese, American Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,162, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device including replacemen... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Nonvolatile memory device and memory system comprising the same" (South Korean Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,163, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Nonvolatile memory device and memory syst... और पढ़ें

US Patent Issued to Sandisk Technologies on Sept. 1 for "Memory device containing constricted channel ends and methods of making the same" (Japanese Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,164, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Memory device containing constricted channel ends an... और पढ़ें

US Patent Issued to Kepler Computing on Sept. 1 for "Etch stop layer based integration process for embedded memory" (Oregon, California Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,165, issued on Sept. 1, was assigned to Kepler Computing Inc. (San Francisco). "Etch stop layer based integration process for embedded memo... और पढ़ें

US Patent Issued to Terra Quantum on Sept. 1 for "Ferroelectric nanoparticle capacitor for non-binary logics" (Swiss Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,166, issued on Sept. 1, was assigned to Terra Quantum AG (St. Gallen, Switzerland). "Ferroelectric nanoparticle capacitor for non-binary lo... और पढ़ें

US Patent Issued to International Business Machines on Sept. 1 for "Dielectric isolation for MRAM array" (New York Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,167, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Dielectric isolation for MRAM array" was inv... और पढ़ें

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US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Read-only memory device and method" (Taiwanese Inventor)

US Patent Issued to Silicon Storage Technology on Sept. 1 for "Non-volatile memory cell with ONO compound insulation layer between floating and control gates and a method of fabrication" (California Inventors)

US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Sept. 1 for "NOR-type memory device having decreased channel resistance, method of manufacturing NOR-type memory device, and electronic apparatus including memory device" (New York Inventor)

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "3D NAND memory device with cross-stacking structure" (Chinese Inventors)

US Patent Issued to Sandisk Technologies on Sept. 1 for "Three-dimensional memory device including replacement insulating layers and methods of forming the same" (Japanese, American Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Nonvolatile memory device and memory system comprising the same" (South Korean Inventors)

US Patent Issued to Sandisk Technologies on Sept. 1 for "Memory device containing constricted channel ends and methods of making the same" (Japanese Inventors)

US Patent Issued to Kepler Computing on Sept. 1 for "Etch stop layer based integration process for embedded memory" (Oregon, California Inventors)

US Patent Issued to Terra Quantum on Sept. 1 for "Ferroelectric nanoparticle capacitor for non-binary logics" (Swiss Inventors)

US Patent Issued to International Business Machines on Sept. 1 for "Dielectric isolation for MRAM array" (New York Inventors)