US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,501, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Dong... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,501, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Dong... Read More

US Patent Issued to Xidian University on April 14 for "Nanochannel gallium nitride-based device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,502, issued on April 14, was assigned to Xidian University (Xi'an, China). "Nanochannel gallium nitride-based device and manufacturing met... Read More

US Patent Issued to Xidian University on April 14 for "Nanochannel gallium nitride-based device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,502, issued on April 14, was assigned to Xidian University (Xi'an, China). "Nanochannel gallium nitride-based device and manufacturing met... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Profile control of isolation structures in semiconductor devices" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,503, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Profile control of isolation stru... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Profile control of isolation structures in semiconductor devices" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,503, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Profile control of isolation stru... Read More

US Patent Issued to Infineon Technologies on April 14 for "Shielding structure for silicon carbide devices" (German Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,504, issued on April 14, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Shielding structure for silicon carbide devices" ... Read More

US Patent Issued to Infineon Technologies on April 14 for "Shielding structure for silicon carbide devices" (German Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,504, issued on April 14, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Shielding structure for silicon carbide devices" ... Read More

US Patent Issued to NAMI MOS on April 14 for "SiC trench MOSFET with an embedded junction barrier Schottky diode" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,505, issued on April 14, was assigned to NAMI MOS Co. LTD. (New Taipei City, Taiwan). "SiC trench MOSFET with an embedded junction barrier... Read More

US Patent Issued to NAMI MOS on April 14 for "SiC trench MOSFET with an embedded junction barrier Schottky diode" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,505, issued on April 14, was assigned to NAMI MOS Co. LTD. (New Taipei City, Taiwan). "SiC trench MOSFET with an embedded junction barrier... Read More

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