US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on July 28 for "Silicon carbide wafer and silicon carbide semiconductor device including the same" (Japanese Inventor)

Posted On: 2026-07-28

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,506, issued on July 28, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. ... Read More

US Patent Issued to ROHM on July 28 for "SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate" (Japanese Inventors)

Posted On: 2026-07-28

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ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,508, issued on July 28, was assigned to ROHM Co. LTD. (Kyoto, Japan). "SiC semiconductor substrate and fabrication method of the SiC semico... Read More

US Patent Issued to Resonac on July 28 for "SiC wafer having an end region with low concentrations of metal impurities and SiC epitaxial wafer" (Japanese Inventors)

Posted On: 2026-07-28

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ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,509, issued on July 28, was assigned to Resonac Corp. (Tokyo). "SiC wafer having an end region with low concentrations of metal impurities ... Read More

US Patent Issued to Qorvo US on July 28 for "Enhancement-mode GaN HFET including ScAIN and method of manufacturing the same" (Texas Inventors)

Posted On: 2026-07-28

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ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,510, issued on July 28, was assigned to Qorvo US Inc. (Greensboro, N.C.). "Enhancement-mode GaN HFET including ScAIN and method of manufact... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Volume-less fluorine incorporation method" (Taiwanese Inventors)

Posted On: 2026-07-28

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ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,511, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Volume-less fluorine incorporation ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

Posted On: 2026-07-28

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ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,512, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and method... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Work-function metal in transistors and method forming same" (Taiwanese, American Inventors)

Posted On: 2026-07-28

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ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,513, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Work-function metal in transistors ... Read More

US Patent Issued to Efficient Power Conversion on July 28 for "GaN device with uniform electric field" (California Inventors)

Posted On: 2026-07-28

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ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,514, issued on July 28, was assigned to Efficient Power Conversion Corp. (El Segundo, Calif.). "GaN device with uniform electric field" was... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Source/drain contacts and methods for forming the same" (Taiwanese Inventors)

Posted On: 2026-07-28

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ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,515, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan). "Source/drain contacts and method... Read More

US Patent Issued to International Business Machines on July 28 for "Semiconductor structure with two air gaps on two sides of a top source-drain middle-of-line contact via" (New York Inventors)

Posted On: 2026-07-28

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ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,516, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Semiconductor structure with two air gaps on... Read More

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US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on July 28 for "Silicon carbide wafer and silicon carbide semiconductor device including the same" (Japanese Inventor)

US Patent Issued to ROHM on July 28 for "SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate" (Japanese Inventors)

US Patent Issued to Resonac on July 28 for "SiC wafer having an end region with low concentrations of metal impurities and SiC epitaxial wafer" (Japanese Inventors)

US Patent Issued to Qorvo US on July 28 for "Enhancement-mode GaN HFET including ScAIN and method of manufacturing the same" (Texas Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Volume-less fluorine incorporation method" (Taiwanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Work-function metal in transistors and method forming same" (Taiwanese, American Inventors)

US Patent Issued to Efficient Power Conversion on July 28 for "GaN device with uniform electric field" (California Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Source/drain contacts and methods for forming the same" (Taiwanese Inventors)

US Patent Issued to International Business Machines on July 28 for "Semiconductor structure with two air gaps on two sides of a top source-drain middle-of-line contact via" (New York Inventors)