US Patent Issued to Qorvo US on July 28 for "Enhancement-mode GaN HFET including ScAIN and method of manufacturing the same" (Texas Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,510, issued on July 28, was assigned to Qorvo US Inc. (Greensboro, N.C.).

"Enhancement-mode GaN HFET including ScAIN and method of manufacturing the same" was invented by Jinqiao Xie (Allen, Texas) and Edward A. Beam III (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is disclosed. The semiconductor device has a substrate with a gallium nitride layer (14) disposed over the substrate. A scandium aluminum nitride layer (10) is disposed over the gallium nitride layer. A source (18) is in contact with the gallium nitride layer, and a drain (20) is spaced from the source, wherein the drain is in contact with the galliu...