US Patent Issued to Resonac on July 28 for "SiC wafer having an end region with low concentrations of metal impurities and SiC epitaxial wafer" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,509, issued on July 28, was assigned to Resonac Corp. (Tokyo).

"SiC wafer having an end region with low concentrations of metal impurities and SiC epitaxial wafer" was invented by Yumiko Nakamura (Tokyo) and Yuzo Sasaki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC wafer according to the present embodiment includes an end region within 5 mm from an outer circumferential end, wherein, in the end region, the concentration of each of Ti, V and Zr is 5.0x1011 atoms/cm2 or less, the concentration of each of Cr, Ni, Cu, W, Mo and Mn is 1.0x1011 atoms/cm2 or less, and the concentration of each of B, Al and Fe is 5.0x1012 atoms/cm2 or less." ...