ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,496, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device" was invented by Ak... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,497, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device and method of manuf... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,498, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device with parallel PN la... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,499, issued on July 28, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and manufacturing meth... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,500, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.). "First and second nanosheet transistors havin... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,501, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Seeded growth for 2D nanoribbon transistors" was invented by Ch... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,502, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device" was invented by Yuichi Harada (Mat... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,503, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Supportive layer in source/drains o... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,504, issued on July 28, was assigned to AUO Corp. (Hsin-Chu, Taiwan). "Thin film transistor and manufacturing method thereof" was invented ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,505, issued on July 28, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Auto-doping reduction in semiconductor structure" was invented by... Read More