US Patent Issued to FUJI ELECTRIC on July 28 for "Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,497, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" was invented by Keishirou Kumada (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type1, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, trenches, gate insulating films, gate electrodes, a first electrode, and...