US Patent Issued to FUJI ELECTRIC on July 28 for "Silicon carbide semiconductor device with parallel PN layer having columns of same conductivity type and different lengths" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,498, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device with parallel PN layer having columns of same conductivity type and different lengths" was invented by Syunki Narita (Matsumoto-city, Japan) and Shinsuke Harada (Tsukuba-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a semiconductor substrate, a parallel pn layer and a device structure provided in the semiconductor substrate, first and second electrodes respectively provided at two main surfaces of the semiconductor substrate, the first electrode being electrically connected to the devic...