ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,831, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device having a gate on a fin... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,832, issued on July 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Epi barrier aligned backside contact" was invented by Leonard P... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,833, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Ho Jin... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,834, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Complementary field effect transist... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,835, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Structure and formation method ... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,836, issued on July 14, was assigned to Socionext Inc. (Kanagawa, Japan). "Semiconductor integrated circuit device" was invented by Junji I... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,838, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Structure and related method for source/drain terminal wi... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,839, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Ki Hwa... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,840, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device with cap e... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,841, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Gate structure on intrinsic base layer and overhanging la... Read More