US Patent Issued to UNITED MICROELECTRONICS on July 14 for "Semiconductor device having a gate on a fin-shaped structure and multi-layer single diffusion break (SDB) features" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,831, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor device having a gate on a fin-shaped structure and multi-layer single diffusion break (SDB) features" was invented by Guang-Yu Lo (New Taipei City, Taiwan), Chun-Tsen Lu (Tainan City, Taiwan), Chung-Fu Chang (Tainan City, Taiwan), Chih-Shan Wu (Tainan City, Taiwan), Yu-Hsiang Lin (New Taipei City, Taiwan) and Wei-Hao Chang (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of forming a fin-shaped structure on a substrate, forming a first trench and a second...