US Patent Issued to GlobalFoundries U.S. on July 14 for "Structure and related method for source/drain terminal within subcollector" (American, Indian Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,838, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Structure and related method for source/drain terminal within subcollector" was invented by Uppili S. Raghunathan (Essex Junction, Vt.), Aaron L. Vallett (Jericho, Vt.), Venkata Narayana Rao Vanukuru (Bangalore, India) and Steven M. Shank (Jericho, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides structures and related methods to provide a source/drain (S/D) terminal within a subcollector. A structure according to the disclosure includes a field effect transistor (FET) structure having a source/drain (S/D) terminal within a semiconductor layer...