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US Patent Issued to FUJI ELECTRIC on July 28 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,502, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device" was invented by Yuichi Harada (Mat... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Supportive layer in source/drains of FinFET devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,503, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Supportive layer in source/drains o... और पढ़ें


US Patent Issued to AUO on July 28 for "Thin film transistor and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,504, issued on July 28, was assigned to AUO Corp. (Hsin-Chu, Taiwan). "Thin film transistor and manufacturing method thereof" was invented ... और पढ़ें


US Patent Issued to TEXAS INSTRUMENTS on July 28 for "Auto-doping reduction in semiconductor structure" (Japanese, American Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,505, issued on July 28, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Auto-doping reduction in semiconductor structure" was invented by... और पढ़ें


US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on July 28 for "Silicon carbide wafer and silicon carbide semiconductor device including the same" (Japanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,506, issued on July 28, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. ... और पढ़ें


US Patent Issued to ROHM on July 28 for "SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,508, issued on July 28, was assigned to ROHM Co. LTD. (Kyoto, Japan). "SiC semiconductor substrate and fabrication method of the SiC semico... और पढ़ें


US Patent Issued to Resonac on July 28 for "SiC wafer having an end region with low concentrations of metal impurities and SiC epitaxial wafer" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,509, issued on July 28, was assigned to Resonac Corp. (Tokyo). "SiC wafer having an end region with low concentrations of metal impurities ... और पढ़ें


US Patent Issued to Qorvo US on July 28 for "Enhancement-mode GaN HFET including ScAIN and method of manufacturing the same" (Texas Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,510, issued on July 28, was assigned to Qorvo US Inc. (Greensboro, N.C.). "Enhancement-mode GaN HFET including ScAIN and method of manufact... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Volume-less fluorine incorporation method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,511, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Volume-less fluorine incorporation ... और पढ़ें


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,512, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and method... और पढ़ें