ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,482, issued on July 28, was assigned to Nuvoton Technology Corporation Japan (Kyoto, Japan). "Semiconductor device" was invented by Ryou Ka... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,483, issued on July 28, was assigned to Micron Technology Inc. (Boise, Idaho). "Integrated assemblies and methods of forming integrated ass... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,484, issued on July 28, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Back-end-of-line vertical-transport transist... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,485, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Sunjun... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,486, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device" was invented by H... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,487, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Selectively thinned gate-all-around (GAA) structures" was inven... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,488, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,489, issued on July 28, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Semiconductor device comprising contact ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,490, issued on July 28, was assigned to BOE Technology Group Co. Ltd. (Beijing). "Semiconductor substrate manufacturing method and semicond... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,491, issued on July 28, was assigned to LG Display Co. Ltd. (Seoul, South Korea). "Thin film transistor array substrate including oxide sem... Read More