US Patent Issued to Nuvoton Technology Corporation Japan on July 28 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,482, issued on July 28, was assigned to Nuvoton Technology Corporation Japan (Kyoto, Japan).

"Semiconductor device" was invented by Ryou Kato (Osaka, Japan), Ryosuke Okawa (Nara, Japan), Ryo Yoshii (Kyoto, Japan) and Eiji Yasuda (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a vertical metal-oxide semiconductor (MOS) transistor that includes: first trenches provided from an upper surface of a low-concentration impurity layer and penetrating through a body region, and extending in a first direction; and second trenches provided from the upper surface of the low-concentration impurity layer and penetrating...