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US Patent Issued to SK hynix on June 23 for "Memory device including charge pump for generating voltage and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,037, issued on June 23, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device including charge pump for generating voltage... Read More


US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Clock signal generator and method of operating the same" (South Korean Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,038, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea). "Clock signal generator and method of oper... Read More


US Patent Issued to SK hynix on June 23 for "Semiconductor device and simultaneous block operations method using multiple source lines" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,039, issued on June 23, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and simultaneous block operations m... Read More


US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 23 for "Memory device, memory system, and method of operating the same using bit line bias voltage scheme" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,040, issued on June 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory device, memory system, and method of o... Read More


US Patent Issued to Winbond Electronics on June 23 for "Semiconductor memory device and test method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,041, issued on June 23, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Semiconductor memory device and test method the... Read More


US Patent Issued to Advantest on June 23 for "Write latency testing systems and methods" (California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,042, issued on June 23, was assigned to Advantest Corp. (Tokyo). "Write latency testing systems and methods" was invented by Srdjan Malisic... Read More


US Patent Issued to Micron Technology on June 23 for "Memory sub-system threshold voltage modification operations" (Idaho, California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,043, issued on June 23, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory sub-system threshold voltage modification operations... Read More


US Patent Issued to Tektronix on June 23 for "Technique to analyze and report accurate data, synchronizing multiple signals in a memory chip" (Indian Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,044, issued on June 23, was assigned to Tektronix Inc. (Beaverton, Ore.). "Technique to analyze and report accurate data, synchronizing mul... Read More


US Patent Issued to Etron Technology on June 23 for "Memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,045, issued on June 23, was assigned to Etron Technology Inc. (Hsinchu, Taiwan). "Memory device" was invented by Chun Shiah (Hsinchu, Taiwa... Read More


US Patent Issued to Micron Technology on June 23 for "Memory repairs" (California, Massachusetts Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,046, issued on June 23, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory repairs" was invented by Sukneet S. Basuta (San Jose... Read More