US Patent Issued to Micron Technology on June 23 for "Memory sub-system threshold voltage modification operations" (Idaho, California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,043, issued on June 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory sub-system threshold voltage modification operations" was invented by Jian Huang (Boise, Idaho) and Zhenming Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes determining, for a plurality of memory dice, binning information relating to quality characteristics of each of the plurality of memory dice. The method further includes performing a select gate scan to determine a first threshold voltage and a first threshold voltage window of each of the plurality of memory dice, and, based on the determined quality characteristics of ...