Exclusive

Publication

Byline

Location

US Patent Issued to SAMSUNG ELECTRONICS on July 21 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,195, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Daewon... Read More


US Patent Issued to CANON ANELVA on July 21 for "Stacked structure, memory device and method of manufacturing stacked structure" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,196, issued on July 21, was assigned to CANON ANELVA Corp. (Kawasaki, Japan). "Stacked structure, memory device and method of manufacturing... Read More


US Patent Issued to Ferroelectric Memory on July 21 for "Memory cell, memory device, and methods thereof" (German Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,197, issued on July 21, was assigned to Ferroelectric Memory GmbH (Dresden, Germany). "Memory cell, memory device, and methods thereof" was... Read More


US Patent Issued to NANYA TECHNOLOGY on July 21 for "Semiconductor device structure" (Taiwanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,198, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device structure" was invented by ... Read More


US Patent Issued to Eagle Technology on July 21 for "Method of fabricating high accuracy embedded resistors in flex substrates" (Florida, Virginia Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,199, issued on July 21, was assigned to Eagle Technology LLC (Melbourne, Fla.). "Method of fabricating high accuracy embedded resistors in ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 21 for "Integrated circuit device" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,200, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Integrated circuit device" was invented b... Read More


US Patent Issued to NANYA TECHNOLOGY on July 21 for "Method of forming capacitor" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,202, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method of forming capacitor" was invented by Kai... Read More


US Patent Issued to Nexperia on July 21 for "Merged-PiN schottky (MPS) diode having a doped region surrounding a plurality of wells, and a method for manufacturing the same" (Dutch Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,203, issued on July 21, was assigned to Nexperia B.V. (Nijmegen, Netherlands). "Merged-PiN schottky (MPS) diode having a doped region surro... Read More


US Patent Issued to SUN YAT-SEN UNIVERSITY on July 21 for "GaN-based trench metal oxide Schottky barrier diode and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,204, issued on July 21, was assigned to SUN YAT-SEN UNIVERSITY (Guangdong, China). "GaN-based trench metal oxide Schottky barrier diode and... Read More


US Patent Issued to Canon on July 21 for "Resonant tunneling diode, oscillator and detection system" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,205, issued on July 21, was assigned to Canon K.K. (Tokyo). "Resonant tunneling diode, oscillator and detection system" was invented by Tat... Read More