US Patent Issued to NANYA TECHNOLOGY on July 21 for "Method of forming capacitor" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,202, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method of forming capacitor" was invented by Kai Hung Lin (Taichung City, Taiwan) and Jyun-Hua Yang (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of forming a capacitor. The method includes the following operations. A metal oxide insulating layer is formed on a first conductive layer with a first temperature, in which the first temperature is lower than a crystallization temperature of the metal oxide insulating layer. A second conductive layer is formed on the metal oxide insulating layer with a s...