US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Manufacturing method of forming a buffer region of semiconductor device and semiconductor device" (Japanese Inventors)

पोस्टेड ऑन: 2026-09-08

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,216, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Manufacturing method of forming a buffer region of semic... और पढ़ें

US Patent Issued to Wolfspeed on Sept. 8 for "Gate trench power semiconductor devices having deep support shields and methods of fabricating such device" (North Carolina Inventors)

पोस्टेड ऑन: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,217, issued on Sept. 8, was assigned to Wolfspeed Inc. (Durham, N.C.). "Gate trench power semiconductor devices having deep support shields... और पढ़ें

US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Semiconductor device with a first parallel pn structure in the active region and a second parallel pn structure in the termination region wherein the depth of the second parallel structure becomes stepwise shallower towards the periphery" (Japanese Inventor)

पोस्टेड ऑन: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,218, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device with a first parallel pn structure ... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including backside isolation structure and placeholder isolation structure" (New York, Virginia Inventors)

पोस्टेड ऑन: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,219, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea). "Semiconductor device including backside isolation stru... और पढ़ें

US Patent Issued to International Business Machines on Sept. 8 for "Nanosheet transistor device with bottom isolation" (New York, California Inventors)

पोस्टेड ऑन: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,220, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet transistor device with bottom isol... और पढ़ें

US Patent Issued to Intel on Sept. 8 for "Integrated circuit structures with backside self-aligned conductive source or drain contact" (Oregon Inventors)

पोस्टेड ऑन: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,221, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures with backside self-aligned conduc... और पढ़ें

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,222, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... और पढ़ें

US Patent Issued to HON HAI PRECISION INDUSTRY, Hon Young Semiconductor on Sept. 8 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,223, issued on Sept. 8, was assigned to HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei City, Taiwan) and Hon Young Semiconductor Corp. (Hsi... और पढ़ें

US Patent Issued to Infineon Technologies on Sept. 8 for "Semiconductor device having macro cells" (Austrian, German Inventors)

पोस्टेड ऑन: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,224, issued on Sept. 8, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device having macro cells" was invent... और पढ़ें

US Patent Issued to HITACHI ENERGY on Sept. 8 for "Gate-commuted thyristor cell with a base region having a varying thickness" (British, Swiss, Czech Inventors)

पोस्टेड ऑन: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,225, issued on Sept. 8, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland). "Gate-commuted thyristor cell with a base region having a... और पढ़ें

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US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Manufacturing method of forming a buffer region of semiconductor device and semiconductor device" (Japanese Inventors)

US Patent Issued to Wolfspeed on Sept. 8 for "Gate trench power semiconductor devices having deep support shields and methods of fabricating such device" (North Carolina Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including backside isolation structure and placeholder isolation structure" (New York, Virginia Inventors)

US Patent Issued to International Business Machines on Sept. 8 for "Nanosheet transistor device with bottom isolation" (New York, California Inventors)

US Patent Issued to Intel on Sept. 8 for "Integrated circuit structures with backside self-aligned conductive source or drain contact" (Oregon Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same" (Taiwanese Inventors)

US Patent Issued to HON HAI PRECISION INDUSTRY, Hon Young Semiconductor on Sept. 8 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

US Patent Issued to Infineon Technologies on Sept. 8 for "Semiconductor device having macro cells" (Austrian, German Inventors)

US Patent Issued to HITACHI ENERGY on Sept. 8 for "Gate-commuted thyristor cell with a base region having a varying thickness" (British, Swiss, Czech Inventors)