US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,222, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with boron- and nitrogen-containing material and method for forming the same" was invented by Cheng-Ming Lin (Kaohsiung City, Taiwan), Szu-Hua Chen (Tainan City, Taiwan), Wei-Yen Woon (Taoyuan City, Taiwan) and Szuya Liao (Zhubei Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer over first sidewalls of the gate stack using a first precursor...