US Patent Issued to Micron Technology on Sept. 1 for "Memory device having tiers of memory cells and access line having multiple conductive regions" (Idaho, California Inventors)

Posted On: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,657, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device having tiers of memory cells and access line ... Read More

US Patent Issued to SK hynix on Sept. 1 for "Memory device and method of performing program operation" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,658, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of performing program operation" ... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Adaptively programming memory cells in different modes to optimize performance" (Idaho Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,659, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Adaptively programming memory cells in different modes to o... Read More

US Patent Issued to MACRONIX International on Sept. 1 for "Writing method, reading method and memory device for hiding data" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,660, issued on Sept. 1, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Writing method, reading method and memory devic... Read More

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory systems and methods of controlling the same, and readable storage media" (Chinese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,661, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory systems and methods of controlling the... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Partial block erase operations in memory devices" (Singaporean, Italian Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,662, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Partial block erase operations in memory devices" was inven... Read More

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor memory device performing program operation" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,663, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device performing program operation" ... Read More

US Patent Issued to Sandisk Technologies on Sept. 1 for "Sub-block mode back pattern effect compensation" (Chinese, American Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,664, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Sub-block mode back pattern effect compensation" was... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Memory device capable of changing pass voltage, memory system, and operating method of the memory device" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,665, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device capable of changing pass volta... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Non-volatile memory device and a method of operating the same" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,666, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Non-volatile memory device and a method of o... Read More

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US Patent Issued to Micron Technology on Sept. 1 for "Memory device having tiers of memory cells and access line having multiple conductive regions" (Idaho, California Inventors)

US Patent Issued to SK hynix on Sept. 1 for "Memory device and method of performing program operation" (South Korean Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Adaptively programming memory cells in different modes to optimize performance" (Idaho Inventors)

US Patent Issued to MACRONIX International on Sept. 1 for "Writing method, reading method and memory device for hiding data" (Taiwanese Inventors)

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory systems and methods of controlling the same, and readable storage media" (Chinese Inventor)

US Patent Issued to Micron Technology on Sept. 1 for "Partial block erase operations in memory devices" (Singaporean, Italian Inventors)

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor memory device performing program operation" (South Korean Inventors)

US Patent Issued to Sandisk Technologies on Sept. 1 for "Sub-block mode back pattern effect compensation" (Chinese, American Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Memory device capable of changing pass voltage, memory system, and operating method of the memory device" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Non-volatile memory device and a method of operating the same" (South Korean Inventors)