US Patent Issued to Sandisk Technologies on Sept. 1 for "Sub-block mode back pattern effect compensation" (Chinese, American Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,664, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Sub-block mode back pattern effect compensation" was invented by Wei Li (Shanghai), Jiacen Guo (Sunnyvale, Calif.), Weiyi Li (Fremont, Calif.), Yichen Wang (Shanghai), Xiang Yang (Santa Clara, Calif.), Liang Li (Shanghai) and Ming Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology for compensation for a sub-block mode (SBM) back pattern effect. When in a sub-block mode, the memory system determines a magnitude for a program verify voltage for a selected word line in a selected sub-block in a selected block. The magnitude for the program verif...