US Patent Issued to Micron Technology on Sept. 1 for "Memory device having tiers of memory cells and access line having multiple conductive regions" (Idaho, California Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,657, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device having tiers of memory cells and access line having multiple conductive regions" was invented by Kamal M. Karda (Boise, Idaho), Si-Woo Lee (Saratoga, Calif.) and Haitao Liu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses in which one of the apparatuses includes a first conductive structure, a second conductive structure, a third conductive structure, and a memory cell. The memory cell includes a semiconductor portion located on a first level of the apparatus and coupled to the first conductive structure, and...