Publication

Byline

Location

US Patent Issued to Floadia on April 7 for "Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,743, issued on April 7, was assigned to Floadia Corp. (Tokyo). "Memory cell, nonvolatile semiconductor storage device, and method for manuf... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,744, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device and electronic system i... और पढ़ें


US Patent Issued to Powerchip Semiconductor Manufacturing on April 7 for "Double patterning method of manufacturing select gates and word lines" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,745, issued on April 7, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan). "Double patterning method of manufac... और पढ़ें


US Patent Issued to KIOXIA on April 7 for "Semiconductor storage device and method of manufacturing semiconductor storage device" (Japanese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,746, issued on April 7, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor storage device and method of manufacturing semiconductor stora... और पढ़ें


US Patent Issued to Tokyo Electron on April 7 for "Fabricating three-dimensional semiconductor structures" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,747, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Fabricating three-dimensional semiconductor structures" was invented ... और पढ़ें


US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 7 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,748, issued on April 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Three-dimensional memory devices and methods ... और पढ़ें


US Patent Issued to Sandisk Technologies on April 7 for "Memory device including composite metal oxide semiconductor channels and methods for forming the same" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,749, issued on April 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Memory device including composite metal oxide semico... और पढ़ें


US Patent Issued to SK hynix on April 7 for "Manufacturing method of semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,750, issued on April 7, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Manufacturing method of semiconductor device" was invented... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor devices and data storage systems including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,751, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices and data storage syste... और पढ़ें


US Patent Issued to Sandisk Technologies on April 7 for "Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,752, issued on April 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Method of making a three-dimensional memory device u... और पढ़ें