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US Patent Issued to SK hynix on June 9 for "Semiconductor device including barrier dielectric layer including ferroelectric material" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,805, issued on June 9, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device including barrier dielectric layer in... Read More


US Patent Issued to Huawei Technologies'Co., 'Ltd.' on June 9 for "Ferroelectric memory and storage device" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,806, issued on June 9, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China). "Ferroelectric memory and storage device" was invent... Read More


US Patent Issued to Kioxia on June 9 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,807, issued on June 9, was assigned to Kioxia Corp. (Tokyo). "Memory device" was invented by Takeshi Iwasaki (Kuwana, Japan), Yosuke Matsush... Read More


US Patent Issued to SK hynix on June 9 for "Memory package and memory module including the memory package" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,808, issued on June 9, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Memory package and memory module including the memory pack... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on June 9 for "Semiconductor device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,809, issued on June 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method of fa... Read More


US Patent Issued to Intel on June 9 for "Inductors for hybrid bonding interconnect architectures" (California, Oregon Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,810, issued on June 9, was assigned to Intel Corp. (Santa Clara, Calif.). "Inductors for hybrid bonding interconnect architectures" was inve... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "High density capacitor implemented using FinFET" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,811, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "High density capacitor implemented us... Read More


US Patent Issued to STMICROELECTRONICS on June 9 for "Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device" (Italian Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,812, issued on June 9, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy). "Forming an electronic device, such as a JBS or MP... Read More


US Patent Issued to FUJI ELECTRIC on June 9 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,813, issued on June 9, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device" was invented by Takamasa Ishikawa (M... Read More


US Patent Issued to Renesas Electronics on June 9 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,814, issued on June 9, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was in... Read More