US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "High density capacitor implemented using FinFET" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,811, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"High density capacitor implemented using FinFET" was invented by Jiefeng Lin (Hsinchu, Taiwan), Hsiao-Lan Yang (Taipei City, Taiwan) and Chih-Yung Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first and a second gate structure each extend in a first direction. A first and a second conductive contact extend in the first direction and are separated from the first and second gate structures in a second direction. A first isolation structure extends in the second direction and separates the first gate structure from the se...