US Patent Issued to SK hynix on June 9 for "Semiconductor device including barrier dielectric layer including ferroelectric material" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,805, issued on June 9, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device including barrier dielectric layer including ferroelectric material" was invented by Dong Ik Suh (Gyeonggi-do, South Korea) and Won Tae Koo (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment includes a first electrode and a second electrode that are spaced apart from each other, a capacitor dielectric structure disposed between the first electrode and the second electrode, and a barrier dielectric layer disposed between one of the first and second electrodes and the capacitor di...