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US Patent Issued to Micron Technology on Oct. 27 for "Memory pillar selection transistor evaluation" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,370, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory pillar selection transistor evaluation" was invented... और पढ़ें


US Patent Issued to NVIDIA on Oct. 27 for "Fast, area efficient wordline decoding scheme" (California Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,371, issued on Oct. 27, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Fast, area efficient wordline decoding scheme" was invented by... और पढ़ें


US Patent Issued to STMicroelectronics on Oct. 27 for "Row decoder circuit and corresponding method of operation" (Italian Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,372, issued on Oct. 27, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy). "Row decoder circuit and corresponding method of... और पढ़ें


US Patent Issued to Yangtze Memory Technologies on Oct. 27 for "Managing program time in memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,373, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Managing program time in memory devices" was ... और पढ़ें


US Patent Issued to Micron Technology on Oct. 27 for "Selection of an optimal single level cell programming scheme" (California, Idaho Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,374, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Selection of an optimal single level cell programming schem... और पढ़ें


US Patent Issued to Yangtze Memory Technologies on Oct. 27 for "Memory device and operating method thereof, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,375, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device and operating method thereof, a... और पढ़ें


US Patent Issued to MACRONIX INTERNATIONAL on Oct. 27 for "Memory device and pre-charge method" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,376, issued on Oct. 27, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Memory device and pre-charge method" was invent... और पढ़ें


US Patent Issued to Sandisk Technologies on Oct. 27 for "Enhanced independent bit scan mode for neighbor plane disturb detection for memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,377, issued on Oct. 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Enhanced independent bit scan mode for neighbor plan... और पढ़ें


US Patent Issued to Micron Technology on Oct. 27 for "Memory configured to resume a suspended erase operation with a variable erase voltage" (Singaporean, American Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,378, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory configured to resume a suspended erase operation wit... और पढ़ें


US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 27 for "Memory devices and program operations having adjusted prepulse thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,379, issued on Oct. 27, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory devices and program operations having ... और पढ़ें