ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,703, issued on Oct. 6, was assigned to Micron Technology Inc. (Boise, Idaho). "Staircase structures for accessing three-dimensional memory a... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,704, issued on Oct. 6, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Alignment mark for back side power connections... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,705, issued on Oct. 6, was assigned to ams-OSRAM AG (Premstatten, Austria). "Semiconductor substrate comprising a through-substrate-via and ... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,706, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Package structure and manufacturing m... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,707, issued on Oct. 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with polymer liner and method... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,708, issued on Oct. 6, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit (IC) device with hybrid metal layer" was inven... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,709, issued on Oct. 6, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Line extension for skip-level via landing" was... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,710, issued on Oct. 6, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure in... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,711, issued on Oct. 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and electronic system inc... Read More
ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,712, issued on Oct. 6, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for manufa... Read More