US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 6 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,712, issued on Oct. 6, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for manufacturing same" was invented by Yuanhao Gao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing method semiconductor includes: providing a base; forming an annular sacrificial blocking layer in the base; forming an etched hole in the base, in which the etched hole is located at an inner side of the annular sacrificial blocking layer; and removing the annular sacrificial blocking layer to obtain an interconnecting hole, in which a width of an upper part of the interconnecting hole...