US Patent Issued to SAMSUNG ELECTRONICS on June 9 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,833, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Seung Mi... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 9 for "Semiconductor devices including silicon nitride (SiN), silicon oxycarbide (SiOC), or silicon oxycarbonitride (SiOCN) liners" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,834, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices including silicon nitrid... Read More

US Patent Issued to International Business Machines on June 9 for "Multilayer work function metal in nanosheet stacks using a sacrificial oxide material" (American, Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,835, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Multilayer work function metal in nanosheet st... Read More

US Patent Issued to GAN SYSTEMS on June 9 for "Scalable Circuit-Under-Pad device topologies for lateral GaN power transistors" (Canadian Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,836, issued on June 9, was assigned to GAN SYSTEMS INC. (Ottawa). "Scalable Circuit-Under-Pad device topologies for lateral GaN power transi... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Semiconductor device and methods of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,837, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and methods ... Read More

US Patent Issued to FUJI ELECTRIC on June 9 for "Silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,838, issued on June 9, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device" was invented by Take... Read More

US Patent Issued to Vanguard International Semiconductor on June 9 for "Semiconductor structures" (Taiwanese, Indonesian Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,839, issued on June 9, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "Semiconductor structures" was invented... Read More

US Patent Issued to APPLIED MATERIALS on June 9 for "Methods of formation of a SiGe/Si superlattice" (Arizona, California Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,840, issued on June 9, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.). "Methods of formation of a SiGe/Si superlattice" was in... Read More

US Patent Issued to PlayNitride Display on June 9 for "Epitaxial structure with increased electrostatic discharge protection capability containing AlGaInP layers" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,841, issued on June 9, was assigned to PlayNitride Display Co. Ltd. (MiaoLi County, Taiwan). "Epitaxial structure with increased electrostat... Read More

US Patent Issued to TEXAS INSTRUMENTS on June 9 for "High band-gap devices with a doped high band-gap gate electrode extension" (Texas Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,843, issued on June 9, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "High band-gap devices with a doped high band-gap gate electrode ext... Read More

• ««
• «
• 42640
• 42641
• 42642
• 42643
• 42644
• 42645
• 42646
• 42647
• 42648
• 42649
• »
• »»