US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Manufacturing method of image sensor package" (South Korean Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,543, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Manufacturing method of image sensor packa... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Manufacturing method of image sensor package" (South Korean Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,543, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Manufacturing method of image sensor packa... Read More

US Patent Issued to SONY SEMICONDUCTOR SOLUTIONS on April 14 for "Solid-state imaging element" (Japanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,544, issued on April 14, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan). "Solid-state imaging element" was invented ... Read More

US Patent Issued to SONY SEMICONDUCTOR SOLUTIONS on April 14 for "Solid-state imaging element" (Japanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,544, issued on April 14, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan). "Solid-state imaging element" was invented ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Photo diode with dual backside deep trench isolation depth" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,545, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Photo diode with dual backside de... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Photo diode with dual backside deep trench isolation depth" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,545, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Photo diode with dual backside de... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Depth sensor" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,546, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Depth sensor" was invented by Seung Hyun L... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Depth sensor" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,546, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Depth sensor" was invented by Seung Hyun L... Read More

US Patent Issued to X-FAB Global Services on April 14 for "Reduced flicker noise transistor layout" (Malaysian, British Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,547, issued on April 14, was assigned to X-FAB Global Services GmbH (Erfurt, Germany). "Reduced flicker noise transistor layout" was inven... Read More

US Patent Issued to X-FAB Global Services on April 14 for "Reduced flicker noise transistor layout" (Malaysian, British Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,547, issued on April 14, was assigned to X-FAB Global Services GmbH (Erfurt, Germany). "Reduced flicker noise transistor layout" was inven... Read More

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