ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,544, issued on April 14, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan).
"Solid-state imaging element" was invented by Shunsuke Maruyama (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a solid-state imaging element with which it is possible to minimize crosstalk between different pixel columns while suppressing a decrease in quantum efficiency of a photoelectric conversion unit due to a pixel separating section. The solid-state imaging element includes a plurality of pixels arranged in a two-dimensional matrix in the X direction and the Y direction and including a photoelectric conversion unit (N-ty...