US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Method of manufacturing semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,523, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Method of manufacturing semiconductor device... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Stacked transistor isolation features and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,524, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Stacked transistor isolation featur... Read More

US Patent Issued to FUJI ELECTRIC on July 28 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,525, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device" was invented by Yo... Read More

US Patent Issued to MediaTek on July 28 for "Bipolar junction transistor (BJT) structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,526, issued on July 28, was assigned to MediaTek Inc. (Hsinchu City, Taiwan). "Bipolar junction transistor (BJT) structure" was invented by... Read More

US Patent Issued to CAMBRIDGE GAN DEVICES on July 28 for "Power semiconductor device comprising a silicon substrate" (British Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,527, issued on July 28, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain). "Power semiconductor device comprising a sil... Read More

US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Semiconductor devices" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,528, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices" was invented by Dongj... Read More

US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,529, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of fabricati... Read More

US Patent Issued to Intel on July 28 for "Metal gate cut formed after source and drain contacts" (Oregon Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,530, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Metal gate cut formed after source and drain contacts" was inve... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Semiconductor device with dielectric layer and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,531, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device with dielectri... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Semiconductor device structure with gate dielectric layer and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,532, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More

• ««
• «
• 79436
• 79437
• 79438
• 79439
• 79440
• 79441
• 79442
• 79443
• 79444
• 79445
• »
• »»