US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Work-function metal in transistors and method forming same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,513, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Work-function metal in transistors ... Read More

US Patent Issued to Efficient Power Conversion on July 28 for "GaN device with uniform electric field" (California Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,514, issued on July 28, was assigned to Efficient Power Conversion Corp. (El Segundo, Calif.). "GaN device with uniform electric field" was... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Source/drain contacts and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,515, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan). "Source/drain contacts and method... Read More

US Patent Issued to International Business Machines on July 28 for "Semiconductor structure with two air gaps on two sides of a top source-drain middle-of-line contact via" (New York Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,516, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Semiconductor structure with two air gaps on... Read More

US Patent Issued to Infineon Technologies on July 28 for "Semiconductor device and method for manufacturing a semiconductor device" (German Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,517, issued on July 28, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device and method for manufacturing a... Read More

US Patent Issued to Mitsubishi Electric on July 28 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,518, issued on July 28, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Transistor unit including shared gate structure, and sub-word line driver and semiconductor device based on the same transistor unit" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,519, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Transistor unit including shared gate struct... Read More

US Patent Issued to Intel on July 28 for "Coupled inductors with GaN switches in GaN 3D power block" (American, Canadian Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,520, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Coupled inductors with GaN switches in GaN 3D power block" was ... Read More

US Patent Issued to Intel on July 28 for "Integrated circuit structures with trench contact depopulation structure" (Oregon Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,521, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures with trench contact depopulation ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "CMOS well regions with high dopant activation level and reduced extended defects" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,522, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "CMOS well regions with high dopant ... Read More

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