US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Dual rail memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,192, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan). "Dual rail memory device" was invented by Yen-C... Read More

US Patent Issued to STMicroelectronics International on May 26 for "Bit line voltage clamping read circuit for an in- memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)" (Indian Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,193, issued on May 26, was assigned to STMicroelectronics International N.V. (Geneva). "Bit line voltage clamping read circuit for an in- me... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Memory device and data latching method" (Canadian Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,194, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory device and data latching metho... Read More

US Patent Issued to ARM on May 26 for "Circuitry to detect cycle count for increased throughput reads and write operations for memory" (American, Indian Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,195, issued on May 26, was assigned to ARM Ltd. (Cambridge, Great Britain). "Circuitry to detect cycle count for increased throughput reads ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING on May 26 for "Memory device, write assist circuit, and method" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,196, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanji... Read More

US Patent Issued to Silicon Storage Technology on May 26 for "Determination of a bias voltage by applying a series of increasing currents to bit line of memory cell in a neural network" (California Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,197, issued on May 26, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.). "Determination of a bias voltage by applying a se... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 26 for "Semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,198, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Youngnam... Read More

US Patent Issued to Kepler Computing on May 26 for "Amplitude modulation for writing to a multi-level bit-cell" (Oregon, California Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,199, issued on May 26, was assigned to Kepler Computing Inc. (San Francisco). "Amplitude modulation for writing to a multi-level bit-cell" w... Read More

US Patent Issued to Techifab on May 26 for "Devices and methods for reading a memristive element" (German Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,200, issued on May 26, was assigned to Techifab GmbH (Dresden, Germany). "Devices and methods for reading a memristive element" was invented... Read More

US Patent Issued to Kioxia on May 26 for "Memory device storing a first, second, and third bit" (Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,201, issued on May 26, was assigned to Kioxia Corp. (Tokyo). "Memory device storing a first, second, and third bit" was invented by Ryu Ogiw... Read More

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