US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING on May 26 for "Memory device, write assist circuit, and method" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,196, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).

"Memory device, write assist circuit, and method" was invented by Jun-Cheng Liu (Hsinchu, Taiwan), Zhi-Min Zhu (Hisnchu, Taiwan), Chien-Yu Huang (Hsinchu, Taiwan), Cheng Hung Lee (Hsinchu, Taiwan) and Hung-Jen Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell in a first power domain of a first power supply voltage, a bit line coupled to the memory cell, and a write assist circuit. The write assist circuit includes an input, an output electrica...