ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,192, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan).
"Dual rail memory device" was invented by Yen-Chi Chou (Tainan City, Taiwan), Shao Hsuan Hsu (Taoyuan City, Taiwan), Tzu-Chun Lin (New Taipei City, Taiwan), Chien-Yu Huang (Zhongli City, Taiwan), Cheng Hung Lee (Hsinchu, Taiwan) and Hung-Jen Liao (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device has a memory cell operated in a first power domain having a first voltage level. A memory word line is connected to the memory cell, and a memory bit line is connected to the memory cell. A word line decoder circuit is operated in the fi...