US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on May 5 for "Folded channel gallium nitride based field-effect transistor and method of manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,013, issued on May 5, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Folded channel gallium nitride b... Read More

US Patent Issued to Monolithic 3D on May 5 for "3D semiconductor device and structure with metal layers and a power delivery path" (Israeli Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,014, issued on May 5, was assigned to Monolithic 3D Inc. (Allen, Texas). "3D semiconductor device and structure with metal layers and a power... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 5 for "Semiconductor devices having variously-shaped source/drain patterns" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,015, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices having variously-shaped so... Read More

US Patent Issued to University of Electronic Science and Technology of China on May 5 for "Lateral power semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,016, issued on May 5, was assigned to University of Electronic Science and Technology of China (Chengdu, China). "Lateral power semiconductor... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 5 for "Semiconductor device with multi-layer contact liner structure" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,017, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device with multi-layer contact li... Read More

US Patent Issued to Intel on May 5 for "Multi-layered or graded semiconductor region in thin film transistor (TFT) structures" (Oregon Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,018, issued on May 5, was assigned to Intel Corp. (Santa Clara, Calif.). "Multi-layered or graded semiconductor region in thin film transisto... Read More

US Patent Issued to BOE Technology Group on May 5 for "Field effect transistor and method for manufacturing same, and display panel" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,019, issued on May 5, was assigned to BOE Technology Group Co. Ltd. (Beijing). "Field effect transistor and method for manufacturing same, an... Read More

US Patent Issued to STMicroelectronics on May 5 for "Silicon carbide MOSFET transistor device with improved characteristics and corresponding manufacturing process" (Italian Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,020, issued on May 5, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy). "Silicon carbide MOSFET transistor device with impro... Read More

US Patent Issued to Securitag Assembly Group on May 5 for "RFID yarn module and method for making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,619,846, issued on May 5, was assigned to Securitag Assembly Group Co. Ltd. (Taichung, Taiwan). "RFID yarn module and method for making the same"... Read More

US Patent Issued to Response Engine Holdings on May 5 for "Communication system for collecting information about a mobile device" (Nevada Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,619,848, issued on May 5, was assigned to Response Engine Holdings LLC (Gardnerville, Nev.). "Communication system for collecting information abo... Read More

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