US Patent Issued to STMicroelectronics on May 5 for "Silicon carbide MOSFET transistor device with improved characteristics and corresponding manufacturing process" (Italian Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,020, issued on May 5, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Silicon carbide MOSFET transistor device with improved characteristics and corresponding manufacturing process" was invented by Patrick Fiorenza (Belpasso, Italy), Fabrizio Roccaforte (Mascalucia, Italy), Edoardo Zanetti (Valverde, Italy) and Mario Giuseppe Saggio (Aci Bonaccorsi, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MOSFET transistor device includes a functional layer of silicon carbide, having a first conductivity type. Gate structures are formed on a top surface of the functional layer and each includes a dielectric region and an electrode re...