US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 21 for "Memory device, memory system, and method for data calculation with the memory device" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,158, issued on April 21, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory device, memory system, and method fo... Read More

US Patent Issued to Commissariat a l'energie atomique et aux energies alternatives, Centre national de la recherche scientifique, Universite d'Aix-Marseille on April 21 for "Neuromorphic circuit based on 2T2R RRAM cells" (French Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,159, issued on April 21, was assigned to Commissariat a l'energie atomique et aux energies alternatives (Paris), Centre national de la rech... Read More

US Patent Issued to ZHEJIANG HIKSTOR TECHNOLOGY on April 21 for "Resistance compensation device and method for storage chip, and storage chip" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,160, issued on April 21, was assigned to ZHEJIANG HIKSTOR TECHNOLOGY Co. LTD. (Hangzhou, China). "Resistance compensation device and metho... Read More

US Patent Issued to Micron Technology on April 21 for "Programming erase blocks coupled to a same string" (American, Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,161, issued on April 21, was assigned to Micron Technology Inc. (Boise, Idaho). "Programming erase blocks coupled to a same string" was in... Read More

US Patent Issued to SK hynix on April 21 for "Page buffer related to performing a program operation, memory device including a page buffer, and method of operating the page buffer" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,162, issued on April 21, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Page buffer related to performing a program operation, m... Read More

US Patent Issued to Yangtze Memory Technologies on April 21 for "Memory device and operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,163, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device and operation method thereof"... Read More

US Patent Issued to Yangtze Memory Technologies on April 21 for "Managing program disturb in memory devices" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,164, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Managing program disturb in memory devices"... Read More

US Patent Issued to INSTITUT MINES TELECOM on April 21 for "Method for detecting an error in an electronic memory" (French Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,165, issued on April 21, was assigned to INSTITUT MINES TELECOM (Palaiseau, France). "Method for detecting an error in an electronic memor... Read More

US Patent Issued to Yangtze Memory Technologies on April 21 for "Memory, operation method of memory and memory system including read calibration circuit" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,166, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory, operation method of memory and memo... Read More

US Patent Issued to Yangtze Memory Technologies on April 21 for "Memory, methods of operating memory, systems and storage mediums" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,167, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory, methods of operating memory, system... Read More

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